• Samsung to reveal superfast DDR5 memory chip 8.0Gbps per pin, 32

    From TechnologyDaily@1337:1/100 to All on Sun Feb 4 19:30:05 2024
    Samsung to reveal superfast DDR5 memory chip 8.0Gbps per pin, 32Gb module approached GDDR5X speeds with 128GB memory modules likely to appear

    Date:
    Sun, 04 Feb 2024 19:16:02 +0000

    Description:
    Samsung's new DDR5 memory offers double the capacity of 16Gb DDR5 DRAM in the same package size.

    FULL STORY ======================================================================

    Samsung is reportedly set to take the wraps off a number of cutting edge memory products at the upcoming 2024 IEEE International Solid-State Circuit Conference .

    Alongside its previously announced GDDR7 memory , which will be making an appearance at the High-Density Memory and Interfaces session, the South
    Korean tech giant will also be unveiling a superfast DDR5 memory chip.

    The high-capacity 32Gb DDR5 DRAM was developed using 12 nanometer (nm)-class process technology to deliver twice the capacity of 16Gb DDR5 DRAM within the same package size. Lower power consumption

    While Samsung hasnt provided too much information about the DDR5 chip it will be unveiling at the conference, we do know the DDR5s I/O speed is up to 8000Mbps per pin and it has been created with a Symmetric-Mosaic Architecture using Samsung's 5th generation 10nm class foundry node, specially tailored
    for DRAM products.

    When the new DDR5 product was first announced at the end of 2023, SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. said With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the
    era of AI (Artificial Intelligence) and big data. We will continue to develop DRAM solutions through differentiated process and design technologies to
    break the boundaries of memory technology.

    Previous DDR5 128GB DRAM modules, manufactured using 16Gb DRAM, required the Through Silicon Via (TSV) process. However, the new 32Gb DRAM allows the production of a 128GB module without the TSV process, reducing power consumption by about 10%, according to Samsung. This makes it a welcome solution for data centers which are currently battling with the ever increasing energy demands of AI.

    Samsung's latest DDR5 technology allows for the creation of 32 GB and 48 GB DIMMs at DDR5-8000 speeds in single-rank configurations, and also support 64 GB and 96 GB DIMMs in dual-rank configurations. We will no doubt find out
    more about the new memory once the conference is underway. More from
    TechRadar Pro Computer RAM gets biggest upgrade in 25 years SO-DIMM laptop memory sticks to disappear as CAMM poised to take over Heres a glimpse at
    what the future of memory and storage could look like



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    Link to news story: https://www.techradar.com/pro/samsung-to-reveal-superfast-ddr5-memory-chip-80g bps-per-pin-32gb-module-approached-gddr5x-speeds-with-128gb-memory-modules-lik ely-to-appear


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